Calculation of Photocarrier Concentration of a 1-D Loophole HgCdTe PN Junction under Steady-State Incidence[J]. Infrared Technology , 2004, 26(6): 41-44,47. DOI: 10.3969/j.issn.1001-8891.2004.06.011
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Citation:
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Calculation of Photocarrier Concentration of a 1-D Loophole HgCdTe PN Junction under Steady-State Incidence[J]. Infrared Technology , 2004, 26(6): 41-44,47. DOI: 10.3969/j.issn.1001-8891.2004.06.011
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Calculation of Photocarrier Concentration of a 1-D Loophole HgCdTe PN Junction under Steady-State Incidence[J]. Infrared Technology , 2004, 26(6): 41-44,47. DOI: 10.3969/j.issn.1001-8891.2004.06.011
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Citation:
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Calculation of Photocarrier Concentration of a 1-D Loophole HgCdTe PN Junction under Steady-State Incidence[J]. Infrared Technology , 2004, 26(6): 41-44,47. DOI: 10.3969/j.issn.1001-8891.2004.06.011
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