ZHAO Hong-yan, SI Jun-jie, DING Jia-xin, CHENG Cai-jing, ZHANG Liang, ZHANG Xiang-feng, CHEN Hui-juan. The Study on the Performance of AlGaN p-i-n Schottky Diode with High AI Fraction[J]. Infrared Technology , 2007, 29(10): 570-572. DOI: 10.3969/j.issn.1001-8891.2007.10.004
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Citation:
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ZHAO Hong-yan, SI Jun-jie, DING Jia-xin, CHENG Cai-jing, ZHANG Liang, ZHANG Xiang-feng, CHEN Hui-juan. The Study on the Performance of AlGaN p-i-n Schottky Diode with High AI Fraction[J]. Infrared Technology , 2007, 29(10): 570-572. DOI: 10.3969/j.issn.1001-8891.2007.10.004
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ZHAO Hong-yan, SI Jun-jie, DING Jia-xin, CHENG Cai-jing, ZHANG Liang, ZHANG Xiang-feng, CHEN Hui-juan. The Study on the Performance of AlGaN p-i-n Schottky Diode with High AI Fraction[J]. Infrared Technology , 2007, 29(10): 570-572. DOI: 10.3969/j.issn.1001-8891.2007.10.004
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Citation:
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ZHAO Hong-yan, SI Jun-jie, DING Jia-xin, CHENG Cai-jing, ZHANG Liang, ZHANG Xiang-feng, CHEN Hui-juan. The Study on the Performance of AlGaN p-i-n Schottky Diode with High AI Fraction[J]. Infrared Technology , 2007, 29(10): 570-572. DOI: 10.3969/j.issn.1001-8891.2007.10.004
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