LIU Yi-Bing, HUANG Xin-Min, LIN An-Ning, XIAO Hong-Zhi. Research Progress Based on GaN Material p-type doped[J]. Infrared Technology , 2008, 30(3): 146-149. DOI: 10.3969/j.issn.1001-8891.2008.03.007
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Citation:
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LIU Yi-Bing, HUANG Xin-Min, LIN An-Ning, XIAO Hong-Zhi. Research Progress Based on GaN Material p-type doped[J]. Infrared Technology , 2008, 30(3): 146-149. DOI: 10.3969/j.issn.1001-8891.2008.03.007
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LIU Yi-Bing, HUANG Xin-Min, LIN An-Ning, XIAO Hong-Zhi. Research Progress Based on GaN Material p-type doped[J]. Infrared Technology , 2008, 30(3): 146-149. DOI: 10.3969/j.issn.1001-8891.2008.03.007
|
Citation:
|
LIU Yi-Bing, HUANG Xin-Min, LIN An-Ning, XIAO Hong-Zhi. Research Progress Based on GaN Material p-type doped[J]. Infrared Technology , 2008, 30(3): 146-149. DOI: 10.3969/j.issn.1001-8891.2008.03.007
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