WANG Yi-feng, TANG Li-bin. Developments of Ohmic Contacts of p-Type GaN devices[J]. Infrared Technology , 2009, 31(2): 69-76. DOI: 10.3969/j.issn.1001-8891.2009.02.002
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Citation:
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WANG Yi-feng, TANG Li-bin. Developments of Ohmic Contacts of p-Type GaN devices[J]. Infrared Technology , 2009, 31(2): 69-76. DOI: 10.3969/j.issn.1001-8891.2009.02.002
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WANG Yi-feng, TANG Li-bin. Developments of Ohmic Contacts of p-Type GaN devices[J]. Infrared Technology , 2009, 31(2): 69-76. DOI: 10.3969/j.issn.1001-8891.2009.02.002
|
Citation:
|
WANG Yi-feng, TANG Li-bin. Developments of Ohmic Contacts of p-Type GaN devices[J]. Infrared Technology , 2009, 31(2): 69-76. DOI: 10.3969/j.issn.1001-8891.2009.02.002
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