LI Jun-wei, ZHAN Guo-zhong, GUO Fang-min. An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell[J]. Infrared Technology , 2009, 31(7): 386-389. DOI: 10.3969/j.issn.1001-8891.2009.07.004
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Citation:
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LI Jun-wei, ZHAN Guo-zhong, GUO Fang-min. An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell[J]. Infrared Technology , 2009, 31(7): 386-389. DOI: 10.3969/j.issn.1001-8891.2009.07.004
|
LI Jun-wei, ZHAN Guo-zhong, GUO Fang-min. An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell[J]. Infrared Technology , 2009, 31(7): 386-389. DOI: 10.3969/j.issn.1001-8891.2009.07.004
|
Citation:
|
LI Jun-wei, ZHAN Guo-zhong, GUO Fang-min. An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell[J]. Infrared Technology , 2009, 31(7): 386-389. DOI: 10.3969/j.issn.1001-8891.2009.07.004
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